Title:
SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/039010
Kind Code:
A1
Abstract:
[Problem] To provide a solid-state imaging element, a method for manufacturing a solid-state imaging element, and an electronic device which make it possible to implement phase difference detection pixels capable of improving the quality of a captured image while enabling miniaturization of pixels in a structure in which a plurality of photodiodes are stacked. [Solution] Provided is a solid-state imaging element equipped with a plurality of pixels including at least two phase difference detection pixels for detecting a focus, wherein each of the pixels have a stacking structure comprising a plurality of photoelectric conversion elements that are stacked on top of each other, and absorb light of wavelengths different from each other to generate electric charges. In the stacking structure of the phase difference detection pixel, a color filter that covers part of the upper surface of any one of the plurality of photoelectric conversion elements and absorbs light of a specific wavelength is provided.
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Inventors:
ANDO YOSHIHIRO (JP)
TOGASHI HIDEAKI (JP)
FUKUOKA SHINPEI (JP)
TOGASHI HIDEAKI (JP)
FUKUOKA SHINPEI (JP)
Application Number:
PCT/JP2018/019519
Publication Date:
February 28, 2019
Filing Date:
May 21, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H04N9/07; H01L27/146; H01L31/10; H04N5/369
Domestic Patent References:
| WO2017110515A1 | 2017-06-29 | |||
| WO2016194620A1 | 2016-12-08 |
Foreign References:
| JP2015050331A | 2015-03-16 |
Attorney, Agent or Firm:
KAMEYA, Yoshiaki et al. (JP)
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