Title:
SOS SUBSTRATE HAVING LOW SURFACE DEFECT DENSITY
Document Type and Number:
WIPO Patent Application WO/2010/137587
Kind Code:
A1
Abstract:
The problem of a defect density increase due to lattice constant mismatch between silicon and sapphire is solved, and an SOS substrate having a low defect density is provided. The bonded SOS substrate (8) has a semiconductor thin film (4) provided on the surface of a sapphire substrate (3). The bonded SOS substrate is obtained by means of: a step wherein the sapphire substrate (3) and a semiconductor substrate (1) are provided; a step wherein an ion implanted layer (2) is formed by implanting ions from the surface of the semiconductor substrate (1); a step wherein surface activation treatment is performed to said surface of the sapphire substrate (3) and/or the semiconductor substrate (1) surface having the ions implanted therein; a step wherein the semiconductor substrate (1) surface and the sapphire substrate (3) surface are bonded at 50-350°C; and a step wherein a bonded body (6) is obtained by performing heat treatment at a highest temperature of 200-350°C to the bonded substrate; and a step wherein the bonded body (6) is disposed at a temperature higher than the bonding temperature, visible light is applied toward the ion implanted layer (2) of the semiconductor substrate (1) from the sapphire substrate (3) side or the semiconductor substrate (1) side, the interface of the ion implanted layer (2) is made brittle, and the semiconductor thin film (4) is transferred.
Inventors:
AKIYAMA SHOJI (JP)
ITO ATSUO (JP)
TOBISAKA YUJI (JP)
KAWAI MAKOTO (JP)
ITO ATSUO (JP)
TOBISAKA YUJI (JP)
KAWAI MAKOTO (JP)
Application Number:
PCT/JP2010/058824
Publication Date:
December 02, 2010
Filing Date:
May 25, 2010
Export Citation:
Assignee:
SHINETSU CHEMICAL CO (JP)
AKIYAMA SHOJI (JP)
ITO ATSUO (JP)
TOBISAKA YUJI (JP)
KAWAI MAKOTO (JP)
AKIYAMA SHOJI (JP)
ITO ATSUO (JP)
TOBISAKA YUJI (JP)
KAWAI MAKOTO (JP)
International Classes:
H01L21/02; H01L21/265; H01L27/12
Foreign References:
| JP2007227415A | 2007-09-06 | |||
| JP2005005711A | 2005-01-06 |
Other References:
See also references of EP 2437281A4
YOSHII ET AL., JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 21, no. 21-1, 1982, pages 175 - 179
"Science of SOI", REALIZE SCIENCE&ENGINEERING CENTER CO., LTD.
YOSHII ET AL., JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 21, no. 21-1, 1982, pages 175 - 179
"Science of SOI", REALIZE SCIENCE&ENGINEERING CENTER CO., LTD.
Attorney, Agent or Firm:
OKUYAMA, Shoichi et al. (JP)
Okuyama In addition, it is 1. (JP)
Okuyama In addition, it is 1. (JP)
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