Title:
SPIN-ORBIT TORQUE MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2019/230352
Kind Code:
A1
Abstract:
This spin-orbit torque magnetoresistance effect element is provided with a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and spin-orbit torque wiring on which the first ferromagnetic layer is laminated, wherein the spin-orbit torque wiring extends in a second direction crossing a first direction, which is the direction normal to the first ferromagnetic layer. The first ferromagnetic layer comprises, in order from the spin-orbit torque wiring side, a first laminate structure and an interfacial magnetic layer, the first laminate structure comprises a ferromagnetic conductor layer and an inorganic compound-containing layer arranged in order from the spin-orbit torque wiring side; the ferromagnetic conductor layer contains a ferromagnetic metal element, and the inorganic compound-containing layer contains at least one inorganic compound selected from the group consisting of carbides, nitrides and sulfides.
Inventors:
SHIOKAWA YOHEI (JP)
Application Number:
PCT/JP2019/018908
Publication Date:
December 05, 2019
Filing Date:
May 13, 2019
Export Citation:
Assignee:
TDK CORP (JP)
International Classes:
H01L29/82; H01L21/8239; H01L27/105; H01L43/08
Domestic Patent References:
| WO2017090730A1 | 2017-06-01 |
Foreign References:
| US20140252439A1 | 2014-09-11 | |||
| US20140312441A1 | 2014-10-23 | |||
| US20170033155A1 | 2017-02-02 | |||
| JP2017059594A | 2017-03-23 | |||
| JP2014045196A | 2014-03-13 |
Attorney, Agent or Firm:
TANAI Sumio et al. (JP)
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