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Patent Searching and Data


Title:
SPUTTERING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2018/225324
Kind Code:
A1
Abstract:
The present invention efficiently generates plasma for sputtering using an antenna and improves plasma uniformity to improve the uniformity of film formation. The apparatus is provided with: a vacuum container 2, which is evacuated and into which a gas is introduced; a substrate-holding part 3 for holding a substrate W inside the vacuum container 2; a target-holding part 4 for holding a target T so as to face the substrate W inside the vacuum container 2; and multiple antennas 5 comprising a flow channel therein through which a cooling liquid flows. The antennas 5 comprise: at least two tubular conductor elements 51; a tubular insulated element 52 that is provided between mutually adjacent conductor elements 51 and insulates said conductor elements 51; and a capacitive element 53, which is connected electrically in series to the mutually adjacent conductor elements 51. The capacitive element 53 is made of: a first electrode 53A, which is connected electrically to one of the mutually adjacent conductor elements 51; a second electrode 53B, which is connected electrically to the other of the mutually adjacent conductor elements 51 and is disposed facing the first electrode 53A; and a dielectric substance that fills the space between the first electrode 53A and the second electrode 53B. The dielectric substance is a cooling liquid CL.

Inventors:
KISHIDA SHIGEAKI (JP)
MATSUO DAISUKE (JP)
SETOGUCHI YOSHITAKA (JP)
ANDO YASUNORI (JP)
Application Number:
PCT/JP2018/010005
Publication Date:
December 13, 2018
Filing Date:
March 14, 2018
Export Citation:
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Assignee:
NISSIN ELECTRIC CO LTD (JP)
International Classes:
H01L21/363; C23C14/34; H05H1/46
Foreign References:
JP2017004602A2017-01-05
JPH0596062U1993-12-27
JP2002069629A2002-03-08
JP2005149887A2005-06-09
JP2004346388A2004-12-09
JP2014037555A2014-02-27
Attorney, Agent or Firm:
NISHIMURA, Ryuhei (JP)
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