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Title:
SPUTTERING DEVICE FOR MANUFACTURING THIN FILMS
Document Type and Number:
WIPO Patent Application WO2005091329
Kind Code:
A3
Abstract:
A sputtering station for depositing a thin film on a substrate (20) includes a cathode comprising two targets (12A, 12B) placed opposite each other defining a plasma region (22), permanent magnets or coils (26) to generate a magnetic field, yokes (24) to direct the magnetic field and two independent power supplies connected to each target to independently control the energy to each target.

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Inventors:
ROHRMANN HARTMUT (CH)
BAUMANN JENS (DE)
Application Number:
PCT/CH2005/000165
Publication Date:
November 24, 2005
Filing Date:
March 21, 2005
Export Citation:
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Assignee:
UNAXIS BALZERS AG (LI)
ROHRMANN HARTMUT (CH)
BAUMANN JENS (DE)
International Classes:
C23C14/34; C23C14/35; H01J37/34; (IPC1-7): H01J37/34; C23C14/34
Foreign References:
US4690744A1987-09-01
US4569746A1986-02-11
US5000834A1991-03-19
EP0546251A21993-06-16
US5069770A1991-12-03
Other References:
N. TERADA ET AL.: "A new sputtering type of ion source for ion beam deposition of thin films", PROCEEDINGS OF THE INTERNATIONAL ION ENGINEERING CONGRESS. THE 7TH SYMPOSIUM (1983 INTERNATIONAL) ON ION SOURCES AND ION ASSISTED TECHNOLOGY (ISIAT '83) AND THE 4TH INTERNATIONAL CONFERENCE ON ION AND PLASMA ASSISTED TECHNIQUES (IPAT '83), 12-16 SEPT, vol. 2, 1983, Kyoto, Japan, pages 999 - 1004, XP009053490
HOSHI Y ET AL: "DEPOSITION OF FE-N FILMS BY MEANS OF AN OPPOSED TARGETS SPUTTERING TYPE PLASMA SOURCE", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 69, no. 8 PART IIB, 15 April 1991 (1991-04-15), pages 5622 - 5624, XP000240973, ISSN: 0021-8979
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