Title:
SPUTTERING METHOD AND SPUTTERING DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/131010
Kind Code:
A1
Abstract:
The present invention provides a sputtering method and a sputtering device capable of suppressing, to the extent practicable, the number of fine particles that adhere to a substrate surface immediately following film deposition. The sputtering method according to this invention involves a carbon target Tg and a film deposition object Wf being placed inside a vacuum chamber 1 and the inside of the vacuum chamber being evacuated to a predetermined pressure with a vacuum pump Vp, after which a sputtering gas is introduced into the vacuum chamber, a plasma atmosphere is created by applying power to the target, and a carbon film is formed by causing carbon particles, which are ejected from the target when the target is bombarded by sputtering gas ions in the plasma, to adhere and be deposited onto the film deposition object. This sputtering method further involves the target being cooled by heat exchange with a first refrigerant at least while the target is receiving radiant heat from the plasma, and the temperature of the first refrigerant being controlled to be kept at a temperature of 263K or lower.
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Inventors:
FUJII YOSHINORI (JP)
NAKAMURA SHINYA (JP)
NORO MITSUNORI (JP)
HASHIMOTO KAZUYOSHI (JP)
NAKAMURA SHINYA (JP)
NORO MITSUNORI (JP)
HASHIMOTO KAZUYOSHI (JP)
Application Number:
PCT/JP2018/044509
Publication Date:
July 04, 2019
Filing Date:
December 04, 2018
Export Citation:
Assignee:
ULVAC INC (JP)
International Classes:
C23C14/06; C23C14/34; H01L21/28; H01L21/285
Foreign References:
| JP2017122262A | 2017-07-13 | |||
| JP2011032568A | 2011-02-17 | |||
| JP2007146290A | 2007-06-14 |
Attorney, Agent or Firm:
SEIGA PATENT AND TRADEMARK CORPORATION (JP)
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