Title:
SPUTTERING TARGET FOR FORMING PROTECTIVE FILM AND LAYERED WIRING FILM
Document Type and Number:
WIPO Patent Application WO/2015/068527
Kind Code:
A1
Abstract:
This sputtering target is for forming a protective film, is used when forming a protective film on one or both sides of a Cu wiring film, and comprises: a total of 5-15 mass% of Ni or Ni and Al (wherein 0.5 mass% or more of Ni is included); 0.1-5.0 mass% of Mn; 0.5-7.0 mass% of Fe; and a remainder of Cu and unavoidable impurities.
Inventors:
MORI SATORU (JP)
KOMIYAMA SHOZO (JP)
KOMIYAMA SHOZO (JP)
Application Number:
PCT/JP2014/077195
Publication Date:
May 14, 2015
Filing Date:
October 10, 2014
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; C22C9/00; C22C9/01; C22C9/05; C22C9/06
Foreign References:
| JP2012193444A | 2012-10-11 | |||
| JP2013133489A | 2013-07-08 | |||
| JP2006241587A | 2006-09-14 |
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
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