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Title:
SPUTTERING TARGET MEMBER, SPUTTERING TARGET, METHOD FOR PRODUCING SPUTTERING TARGET MEMBER, AND METHOD FOR PRODUCING SPUTTERING FILM
Document Type and Number:
WIPO Patent Application WO/2020/202649
Kind Code:
A1
Abstract:
Provided is a sputtering target member that has a low specific resistance and is suitable for maintaining a stable sputter discharge. Said sputtering target member contains MgO and Ti oxide, wherein: when the total of Mg, Ti, and O is 100 at%, the elements satisfy, in terms of at%, 10≤Mg≤47, 5≤Ti≤50, and 37≤O≤51, respectively; and an X-ray diffraction profile obtained by analyzing a sputtered surface by an X-ray diffraction method has a diffraction peak derived from a Ti2O phase.

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Inventors:
SHIMOJUKU AKIRA (JP)
SATO ATSUSHI (JP)
Application Number:
PCT/JP2019/048335
Publication Date:
October 08, 2020
Filing Date:
December 10, 2019
Export Citation:
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Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34; C04B35/04; C04B35/46
Domestic Patent References:
WO2016088867A12016-06-09
WO2019003788A12019-01-03
WO2014156497A12014-10-02
WO2013005690A12013-01-10
Foreign References:
JP2015122312A2015-07-02
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL (JP)
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