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Title:
SPUTTERING TARGET AND METHOD FOR MANUFACTURING SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2020/202604
Kind Code:
A1
Abstract:
Provided are a sputtering target in which the occurrence of particles can be reduced, and which has improved uniformity, and a method for manufacturing the sputtering target. The present invention provides a sputtering target characterized by including 10 mol% to 85 mol% Co, 0 mol% to 47 mol% Pt, and 0 mol% to 47 mol% Cr as metal components, and by including at least B6O as an oxide component.

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Inventors:
FURUYA YUKI (JP)
Application Number:
PCT/JP2019/037143
Publication Date:
October 08, 2020
Filing Date:
September 20, 2019
Export Citation:
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Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34; B22F3/10; C04B35/00; C22C1/05; C22C5/04; C22C19/07; C22C30/00; C22C32/00
Foreign References:
JP2012117147A2012-06-21
JP2010118115A2010-05-27
JP5878242B22016-03-08
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL (JP)
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