Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SPUTTERING TARGET AND METHOD FOR PRODUCING SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2019/176962
Kind Code:
A1
Abstract:
Provided is a sputtering target which has a molybdenum content of 99.99 mass% or more, a relative density of 98% or more, and an average crystal grain diameter of 400 μm or less.

Inventors:
SUGIMOTO KEIJIRO (JP)
MURATA SHUHEI (JP)
Application Number:
PCT/JP2019/010094
Publication Date:
September 19, 2019
Filing Date:
March 12, 2019
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34
Foreign References:
JP2001295035A2001-10-26
JP2011132563A2011-07-07
JP2005154814A2005-06-16
JP2005133197A2005-05-26
JPH04218912A1992-08-10
JP2000306863A2000-11-02
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL (JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: ABSORBENT ARTICLE PACKAGING, AND PACKAGE FOR ABSORBENT ARTICLE

Next Patent: COCOA BUTTER COMPATIBILITY IMPROVER AND METHOD FOR PRODUCING SAME, AND NON-TEMPERED CHOCOLATE AND FO...