Title:
SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/026954
Kind Code:
A1
Abstract:
A sputtering target provided with an oxide sintered compact including a spinel structure compound containing indium element (In), tin element (Sn), zinc element (Zn), an element X, and oxygen, the atomic ratios of the elements satisfying formula (1), and the spinel structure compound furthermore being represented by the formula Zn2SnO4. (1): 0.001 ≤ X/(In + Sn + Zn + X) ≤ 0.05. (In formula (1), In, Zn, Sn, and X represent the amounts of indium element, zinc element, tin element, and element X, respectively, contained in the oxide sintered compact. Element X is at least one species selected from Ge, Si, Y, Zr, Al, Mg, Yb, and Ga.)
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Inventors:
OYAMA MASASHI (JP)
ITOSE MAMI (JP)
ITOSE MAMI (JP)
Application Number:
PCT/JP2018/028842
Publication Date:
February 07, 2019
Filing Date:
August 01, 2018
Export Citation:
Assignee:
IDEMITSU KOSAN CO (JP)
International Classes:
C04B35/01; C23C14/34; C04B35/453; H01L21/363
Domestic Patent References:
| WO2014112363A1 | 2014-07-24 | |||
| WO2014112369A1 | 2014-07-24 | |||
| WO2012153507A1 | 2012-11-15 | |||
| WO2013179676A1 | 2013-12-05 | |||
| WO2007034733A1 | 2007-03-29 | |||
| WO2007037191A1 | 2007-04-05 | |||
| WO2010067571A1 | 2010-06-17 | |||
| WO2001038599A1 | 2001-05-31 |
Foreign References:
| JP2014098204A | 2014-05-29 | |||
| JP2014111818A | 2014-06-19 | |||
| JP2015214436A | 2015-12-03 | |||
| JP2014218706A | 2014-11-20 | |||
| JP2014037617A | 2014-02-27 |
Attorney, Agent or Firm:
KINOSHITA & ASSOCIATES (JP)
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