Title:
SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2013/133353
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a sputtering target that prevents the occurrence of coarse clusters such as particles, splashes, and dust during sputtering of a target and that enhances the uniformity of the thickness of a thin film formed by sputtering. The sputtering target is composed primarily of copper of a purity of 99.9 mass% or more and is characterized by containing 10 ppm or less of sulfur (S) and 2 ppm or less of lead (Pb), and is preferably characterized in that the purity of the copper is 99.96 mass% or more.
Inventors:
YOON YOUNGDUK (JP)
ANDOH TOSHIYUKI (JP)
UEDA KENICHIRO (JP)
ANDOH TOSHIYUKI (JP)
UEDA KENICHIRO (JP)
Application Number:
PCT/JP2013/056231
Publication Date:
September 12, 2013
Filing Date:
March 07, 2013
Export Citation:
Assignee:
FURUKAWA ELECTRIC CO LTD (JP)
International Classes:
C23C14/34; C22F1/08; H01L21/285; C22F1/00
Foreign References:
| JPH1060632A | 1998-03-03 | |||
| JPH10330923A | 1998-12-15 | |||
| JP2001152266A | 2001-06-05 |
Attorney, Agent or Firm:
NAGATA Yoshiaki et al. (JP)
Yoshiaki Nagata (JP)
Yoshiaki Nagata (JP)
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