Title:
ON-STATE MALFUNCTION DETECTION DEVICE AND METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2015/137006
Kind Code:
A1
Abstract:
The on-state malfunction detection device detects an on-state malfunction, for instance, in an IGBT (3b), which is provided to correspond to a PTC element (2b) whereof the resistance value varies according to temperature, and which controls the electrification of the PTC element (2b). In a state in which a turn-off instruction has been sent from a control device to the IGBT (3b), the on-state malfunction detection device determines through calculation an electric potential difference after voltage division of the voltage between the two ends of the PTC element (2b), and detects an on-state malfunction of the IGBT (3b) when this electric potential difference is equal to a predetermined threshold value or greater. This allows for the detection of an on-state malfunction in a switching element that performs a conduction control for an element whereof the resistance value varies according to temperature.
Inventors:
NAGASAKA KEIJI (JP)
SATO HIDETAKA (JP)
OSAKI TOMOYASU (JP)
SATO HIDETAKA (JP)
OSAKI TOMOYASU (JP)
Application Number:
PCT/JP2015/052842
Publication Date:
September 17, 2015
Filing Date:
February 02, 2015
Export Citation:
Assignee:
MITSUBISHI HEAVY IND AUTOMOTIVE THERMAL SYS CO LTD (JP)
International Classes:
H05B3/00; B60H1/22
Foreign References:
| JP2008034141A | 2008-02-14 | |||
| JP5235847B2 | 2013-07-10 | |||
| JPH04158272A | 1992-06-01 | |||
| JP2012075262A | 2012-04-12 | |||
| JP5434388B2 | 2014-03-05 | |||
| JP2009290978A | 2009-12-10 | |||
| JP2008220058A | 2008-09-18 | |||
| JP4570859B2 | 2010-10-27 |
Attorney, Agent or Firm:
FUJITA, Takaharu et al. (JP)
Takaharu Fujita (JP)
Takaharu Fujita (JP)
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