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Patent Searching and Data


Title:
STORAGE CONTROL CIRCUIT, MEMORY, REPAIR METHOD FOR MEMORY, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/012123
Kind Code:
A1
Abstract:
Provided in the present application are a storage control circuit, a memory, a repair method for the memory, and an electronic device. The storage control circuit is used for controlling a storage array in the memory. The storage array comprises a plurality of storage areas, each of which comprises a plurality of storage unit rows. The storage control circuit comprises a plurality of word line driving circuits corresponding to the plurality of storage areas on a one-to-one basis, a decoder and a driving control circuit. Each word line driving circuit comprises a plurality of driving sub-circuits. Each driving sub-circuit is connected to one storage unit row in the corresponding storage area and is used for sending a driving signal to the storage unit row. The driving control circuit is connected to at least some of the driving sub-circuits in each word line driving circuit. Therefore, the driving control circuit can be used for independently driving any driving sub-circuit connected to the driving control circuit, so as to activate the storage unit row connected to the driving sub-circuit, so that the flexibility of control over the storage unit rows in the memory can be improved.

Inventors:
WANG YICHENG (CN)
JING WEILIANG (CN)
LIU RONGBIN (CN)
WANG ZHENGBO (CN)
LIAO HENG (CN)
Application Number:
PCT/CN2023/099662
Publication Date:
January 18, 2024
Filing Date:
June 12, 2023
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G11C29/00
Foreign References:
CN112735504A2021-04-30
CN110473870A2019-11-19
CN113012734A2021-06-22
CN113299336A2021-08-24
US20080137455A12008-06-12
Attorney, Agent or Firm:
TDIP & PARTNERS (CN)
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