Title:
STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/031015
Kind Code:
A1
Abstract:
Provided is a novel storage device. The storage device has: a plurality of first wirings extending in a first direction; a plurality of storage element groups; and oxide layers extending along the side surfaces of the first wirings, wherein each of the storage element groups has a plurality of storage elements, and each of the storage elements has a first transistor and a capacitive element. A gate electrode of the first transistor is electrically connected to the first wiring. The oxide layer has a region that is in contact with a semiconductor layer of the first transistor. A second transistor is provided between the adjacent storage element groups. A high power supply potential is supplied to either or both of a source electrode and a drain electrode of the second transistor.
Inventors:
ONUKI TATSUYA (JP)
KATO KIYOSHI (JP)
ATSUMI TOMOAKI (JP)
YAMAZAKI SHUNPEI (JP)
KATO KIYOSHI (JP)
ATSUMI TOMOAKI (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2019/056433
Publication Date:
February 13, 2020
Filing Date:
July 29, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/8242; H01L21/8239; H01L27/105; H01L27/108; H01L29/786
Foreign References:
| JP2008078645A | 2008-04-03 | |||
| JP2018073453A | 2018-05-10 | |||
| JP2017120937A | 2017-07-06 | |||
| JP2017162538A | 2017-09-14 |
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