Title:
STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/069339
Kind Code:
A1
Abstract:
This storage device has: a first insulator on a substrate; an oxide semiconductor which covers at least a portion of the first insulator; first and second conductors on the oxide semiconductor; a second insulator on the first conductor; a third insulator on the second conductor; a third conductor on the second insulator; a fourth conductor on the third insulator; a fourth insulator which is disposed on the third conductor and the fourth conductor and has a first opening overlapping gaps between the first conductor, the second insulator, and the third conductor, and the second conductor, the third insulator, and the fourth conductor; a fifth insulator disposed inside the first opening; a fifth conductor disposed on the fifth insulator; a sixth conductor which is disposed inside a second opening formed in the fourth insulator and is in contact with the upper surface of the third conductor; and a seventh conductor which is disposed inside a third opening formed in the fourth insulator, the third insulator, and the fourth conductor and is in contact with the upper surface of the second conductor, wherein the height of the first insulator is greater than the width thereof, and the upper surface of the first insulator is in contact with the fifth insulator.
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Inventors:
YAMAZAKI SHUNPEI (JP)
KUNITAKE HITOSHI (JP)
OOTA MASASHI (JP)
SAITO SATORU (JP)
KUNITAKE HITOSHI (JP)
OOTA MASASHI (JP)
SAITO SATORU (JP)
Application Number:
PCT/IB2023/059426
Publication Date:
April 04, 2024
Filing Date:
September 25, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H10B12/00; H01L21/336; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L29/786; H01L29/788; H01L29/792; H10B41/70
Domestic Patent References:
| WO2020109923A1 | 2020-06-04 |
Foreign References:
| JP2018206841A | 2018-12-27 | |||
| JP2013165260A | 2013-08-22 | |||
| JP2018195814A | 2018-12-06 |
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