Title:
SUBSTRATE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2007/034808
Kind Code:
A1
Abstract:
Provided are a substrate, which has a desired shape and a high density and high quality
diamond film; a method for manufacturing such substrate; and a diamond substrate.
A multitude of ultrafine particles (11) made of diamond are spread on a growing
substrate (silicon substrate) (10). On the ultrafine particles (11), for instance,
steel balls having a diameter of 1mm-3mm are arranged, then, ultrasonic vibration
in a vertical direction is applied to the growing substrate (10). The steel balls
vibrate and the ultrafine particles (11) are embedded in the growing substrate
(10) in a desired pattern by the applied pressure. Then, when the ultrafine particles
(11) are grown by CVD method, a diamond film (14) is formed. When the growing substrate
(10) is removed, only the diamond film (14) (diamond substrate) can be obtained.
Inventors:
WATANABE JUNJI (JP)
TOUGE MUTSUMI (JP)
SHIMIZU MASAHIRO (JP)
TOUGE MUTSUMI (JP)
SHIMIZU MASAHIRO (JP)
Application Number:
PCT/JP2006/318586
Publication Date:
March 29, 2007
Filing Date:
September 20, 2006
Export Citation:
Assignee:
NAT UNIV CORP KUMAMOTO UNIV (JP)
WATANABE JUNJI (JP)
TOUGE MUTSUMI (JP)
SHIMIZU MASAHIRO (JP)
WATANABE JUNJI (JP)
TOUGE MUTSUMI (JP)
SHIMIZU MASAHIRO (JP)
International Classes:
C30B29/04; C23C24/04
Foreign References:
| JPH04132691A | 1992-05-06 | |||
| JPH1081586A | 1998-03-31 |
Other References:
WATANABE J. ET AL.: "Silicon Kiban no Maeshori Gijutsu to CVD Diamond Usumaku no Tokusei no Kankei", 2004 NENDO SEIMITSU KOGAKUKAI MIYAZAKI CHIHO KOENKAI, 2004, pages 55 - 56
Attorney, Agent or Firm:
FUJISHIMA, Youichiro et al. (9-5 Shinjuku 1-chome, Shinjuku-ku Tokyo 22, JP)
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