Title:
SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2007/063838
Kind Code:
A1
Abstract:
A substrate processing apparatus comprises a chamber in which a processing space
for processing a substrate is defined and which is made of metal, at least one rod-shaped
heating body which heats the substrate, and a tube body which houses the heating
body and is made of a material different from that of the chamber. The outer diameter
on the processing space side of the tube body in a through part in which the tube
body passes through the wall of the chamber is set to a dimension smaller than that
on the outer side of the chamber of the tube body in the through part.
Inventors:
YANAGISAWA YOSHIHIKO (JP)
TANABE MITSURO (JP)
TANABE MITSURO (JP)
Application Number:
PCT/JP2006/323692
Publication Date:
June 07, 2007
Filing Date:
November 28, 2006
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
YANAGISAWA YOSHIHIKO (JP)
TANABE MITSURO (JP)
YANAGISAWA YOSHIHIKO (JP)
TANABE MITSURO (JP)
International Classes:
H01L21/26; H01L21/02; H01L21/205; C23C16/46
Foreign References:
| JP2005101228A | 2005-04-14 | |||
| JPH07130677A | 1995-05-19 | |||
| JPS61131419A | 1986-06-19 | |||
| JP2005012141A | 2005-01-13 |
Attorney, Agent or Firm:
ARAFUNE, Hiroshi et al. (5F. Nikko Kagurazaka Bldg., 18, Iwatoch, Shinjuku-ku Tokyo 32, JP)
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