Title:
SUBSTRATE PROCESSING DEVICE, JOINING PART, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/138183
Kind Code:
A1
Abstract:
[Problem] To provide technology that can improve uniformity in a film formed on a substrate. [Solution] Provided is a substrate processing device that has: a gas introducing unit constituted so as to introduce gas into a reaction pipe for processing the substrate; a heating unit for heating the gas outside of the reaction pipe; and a connecting unit disposed between the gas introducing unit and the heating unit. The connecting unit is constituted of: an outer pipe connected to the gas introducing unit via a sealing member; and an inner pipe formed with a diameter smaller than the outer pipe, having one end connected to the heating unit, and the other end extending at least to the position where the sealing member is disposed.
Inventors:
YAMAGUCHI TAKATOMO (JP)
TANIYAMA TOMOSHI (JP)
SASAKI TAKAFUMI (JP)
TANIYAMA TOMOSHI (JP)
SASAKI TAKAFUMI (JP)
Application Number:
PCT/JP2016/077143
Publication Date:
August 17, 2017
Filing Date:
September 14, 2016
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/31; C23C16/455; H01L21/22; H01L21/324
Domestic Patent References:
| WO1990012126A1 | 1990-10-18 |
Foreign References:
| JP2010090422A | 2010-04-22 | |||
| JPH0325230U | 1991-03-15 | |||
| JPH04187592A | 1992-07-06 | |||
| JPH0471898U | 1992-06-25 | |||
| JPH10231970A | 1998-09-02 | |||
| JP2010045251A | 2010-02-25 |
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