Title:
SUBSTRATE-PROCESSING DEVICE, PROGRAM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/145084
Kind Code:
A1
Abstract:
The purpose of the present invention is to suppress the occurrence of foreign matter caused by a gas containing hydrogen and oxygen. This semiconductor device manufacturing method involves (a) a step in which a gas that contains hydrogen and oxygen is supplied to a film which is formed on a substrate in a processing chamber set to a first pressure, reforming the film, (b) a step in which, under a second pressure at which the gas containing hydrogen and oxygen remaining in the processing chamber after performing (a) maintains a gaseous state, an inert gas is supplied into the processing chamber and gas is discharged from the processing chamber, purging the processing chamber, and (c) a step in which the processing chamber is evacuated so as to decrease the pressure in the processing chamber after performing (b) to a third pressure lower than the second pressure.
More Like This:
Inventors:
SONE SHIN (JP)
HORIIKE RYOTA (JP)
HATTA HIROKI (JP)
HORIIKE RYOTA (JP)
HATTA HIROKI (JP)
Application Number:
PCT/JP2019/049987
Publication Date:
July 16, 2020
Filing Date:
December 20, 2019
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31; C23C16/455; C23C16/56; H01L21/316
Domestic Patent References:
| WO2017046921A1 | 2017-03-23 | |||
| WO2013146632A1 | 2013-10-03 |
Foreign References:
| JP2004296814A | 2004-10-21 | |||
| JP2011134793A | 2011-07-07 | |||
| JP2005229028A | 2005-08-25 | |||
| JP2001148381A | 2001-05-29 |
Attorney, Agent or Firm:
PATENT PROFESSIONAL CORPORATION IPWIN (JP)
Download PDF: