Title:
SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR DEVICE PRODUCTION METHOD, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2024/042621
Kind Code:
A1
Abstract:
The present invention provides technology that makes it possible to improve uniformity of substrate processing. The present invention comprises: a processing chamber that is for processing a substrate; a processing gas supply unit that supplies a processing gas to the processing chamber; a heating unit that is capable of heating the processing chamber; a thermal insulation chamber that constitutes a thermal insulation region which is provided below the processing chamber; an inert gas supply unit that is capable of supplying inert gas to the thermal insulation chamber from below; a first exhaust unit that is provided with a first exhaust pipe which is connected to a side of the thermal insulation chamber between the inert gas supply unit and the processing chamber in the vertical direction; and a second exhaust unit that is provided with a second exhaust pipe which is connected to the processing chamber.
Inventors:
OKAJIMA YUSAKU (JP)
Application Number:
PCT/JP2022/031771
Publication Date:
February 29, 2024
Filing Date:
August 23, 2022
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31
Domestic Patent References:
| WO2020026445A1 | 2020-02-06 |
Foreign References:
| JP2010080657A | 2010-04-08 | |||
| JP2020053551A | 2020-04-02 | |||
| JP2020017757A | 2020-01-30 | |||
| JP2016157725A | 2016-09-01 | |||
| JPH07106255A | 1995-04-21 | |||
| JP2006086186A | 2006-03-30 |
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
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