Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2022/244678
Kind Code:
A1
Abstract:
A substrate processing method according to an illustrative embodiment of the present invention is for processing substrates comprising a film to be etched and a mask that is disposed upon the film to be etched and has an opening. This method includes: (a) a step in which a first processing gas is used to form a first layer containing nitrogen on a side wall of a recessed section that is provided in the film to be etched and corresponds to the opening; (b) a step in which, after (a), a second processing gas that includes a gas containing carbon and hydrogen is used to form a second layer containing carbon and hydrogen upon the first layer; and (c) a step in which, after (b), a third processing gas is used to etch the recessed section.
Inventors:
GOHIRA TAKU (JP)
NAKAYA MICHIKO (JP)
SATO MASAHIRO (JP)
NAKAYA MICHIKO (JP)
SATO MASAHIRO (JP)
Application Number:
PCT/JP2022/020086
Publication Date:
November 24, 2022
Filing Date:
May 12, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; C23F4/00
Domestic Patent References:
| WO2020041213A1 | 2020-02-27 |
Foreign References:
| US20200066540A1 | 2020-02-27 | |||
| US20160343580A1 | 2016-11-24 | |||
| JP2016021546A | 2016-02-04 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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