Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/255772
Kind Code:
A1
Abstract:
A substrate processing method according to the present disclosure comprises a preparation step, an inhibition film formation step and a plating step. In the preparation step, a substrate (W) is prepared, in which a depressed part is formed in the surface of the substrate (W) and a seed layer (102) is formed on the surface of the substrate (W) and the inner surface of the depressed part (101). In the inhibition film formation step, a plating inhibition film (103C) is formed on an upper part of the depressed part. In the plating step, subsequent to the inhibition film formation step, a plating solution is brought into contact with the substrate to form a plating film in the depressed part so that the depressed part is filled with the plating film (104).
Inventors:
SHIRAISHI MASATOSHI (JP)
Application Number:
PCT/JP2020/022492
Publication Date:
December 24, 2020
Filing Date:
June 08, 2020
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
C25D7/12; C23C28/02; C25D5/02; C25D5/48; H01L21/288; H05K3/18
Domestic Patent References:
| WO2018230377A1 | 2018-12-20 |
Foreign References:
| JP2005333153A | 2005-12-02 | |||
| JP2000235981A | 2000-08-29 | |||
| JP2016122800A | 2016-07-07 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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