Title:
SUBSTRATE TREATING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ELECTROSTATIC SHIELD
Document Type and Number:
WIPO Patent Application WO/2019/180889
Kind Code:
A1
Abstract:
Obtained are a substrate treating device, a semiconductor device manufacturing method, and an electrostatic shield capable of inhibiting occurrence of sputtering on an inner peripheral surface of a treatment container when plasma excitation of treatment gas is performed in the treatment container. The electrostatic shield is formed between an outer peripheral surface of the treatment container and a coil. The electrostatic shield has formed therein: a partition section that extends in the circumferential direction of the coil and that serves as a partition between a part of the coil and the outer peripheral surface of the treatment container; and an opening section that extends in the circumferential direction and that is open between another part of the coil and the outer peripheral surface of the treatment container.
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Inventors:
YASUI TAKESHI (JP)
FUNAKI KATSUNORI (JP)
TSUBOTA YASUTOSHI (JP)
HARADA KOICHIRO (JP)
FUNAKI KATSUNORI (JP)
TSUBOTA YASUTOSHI (JP)
HARADA KOICHIRO (JP)
Application Number:
PCT/JP2018/011471
Publication Date:
September 26, 2019
Filing Date:
March 22, 2018
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31; H01L21/318; H05H1/46
Foreign References:
| JP2014075362A | 2014-04-24 | |||
| JP2008288437A | 2008-11-27 | |||
| JP2014036026A | 2014-02-24 | |||
| JP2013055243A | 2013-03-21 |
Attorney, Agent or Firm:
NAKAJIMA, Jun et al. (JP)
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