Title:
SUBSTRATE TREATMENT DEVICE, REACTION TUBE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2018/150615
Kind Code:
A1
Abstract:
Disclosed is a technology of uniformizing, among wafers, the velocity distribution of a treatment gas in a reaction tube. The device according to the present invention is provided with: a substrate holder that holds a plurality of substrates; a cylindrical section, which is disposed in a reaction tube, and which has a treatment chamber for treating the substrates by housing the substrate holder therein; a nozzle disposition chamber that is provided by partitioning a gap between the reaction tube and the cylindrical section; a gas nozzle, which is disposed in the nozzle disposition chamber, and which supplies the treatment gas to the inside of the treatment chamber; a gas supply port formed in the cylindrical section so that the nozzle disposition chamber and the treatment chamber are in communication with each other; a gas exhaust port, which is formed in the cylindrical section so that the gap and the treatment chamber are in communication with each other, and which exhausts the atmosphere in the treatment chamber to the gap; and an exhaust section, which is connected to the reaction tube, and which exhausts the atmosphere in the gap.
Inventors:
SAIDO SHUHEI (JP)
SASAKI TAKAFUMI (JP)
YOSHIDA HIDENARI (JP)
OKAJIMA YUSAKU (JP)
SASAKI TAKAFUMI (JP)
YOSHIDA HIDENARI (JP)
OKAJIMA YUSAKU (JP)
Application Number:
PCT/JP2017/032706
Publication Date:
August 23, 2018
Filing Date:
September 11, 2017
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31; C23C16/455; H01L21/318
Domestic Patent References:
| WO2015041376A1 | 2015-03-26 |
Foreign References:
| JP2006080101A | 2006-03-23 | |||
| JP2015183224A | 2015-10-22 |
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