SUBSTRATE TREATMENT METHOD AND APPARATUS

WIPO Patent Application WO/2019/059620

A1

The present invention relates to a substrate treatment method for removing silicon oxide or silicon nitride formed on a silicon substrate, comprising the steps of: converting at least a portion of the silicon oxide or the silicon nitride into ammonium hexafluorosilicate ((NH4)2SiF6) by supplying reaction gas, which reacts with the silicon oxide or the silicon nitride, to the silicon substrate heated when arranged inside a chamber; removing (NH4)2SiF6 by supplying plasma non-treated inert gas to the silicon substrate having generated (NH4)2SiF6; and removing residue, including fluorine (F) remaining on the surface of the silicon substrate, by spraying, onto the silicon substrate from which (NH4)2SiF6 has been removed, hydrogen-containing gas having transitioned to an excited state through heating. According to the present invention, F remaining on the surface of a substrate during dry cleaning can be removed using hydrogen-containing gas heated to a predetermined temperature, thereby enabling F removal efficiency and productivity to be greatly improved.

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KIM IN-JUN (KR)
LEE GIL-GWANG (KR)
PARK JAE-YANG (KR)
LIM DOO-HO (KR)

PCT/KR2018/011009

March 28, 2019

September 19, 2018

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MUJIN ELECTRONICS CO LTD (KR)

H01L21/02; H01L21/67

KR20150109288A	2015-10-01
KR20080037565A	2008-04-30
JP2004119417A	2004-04-15
KR20170058282A	2017-05-26
KR20160082476A	2016-07-08

DARAE IP FIRM (KR)

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