Title:
SUBSTRATE TREATMENT METHOD, COMPUTER STORAGE MEDIUM, AND SUBSTRATE TREATMENT SYSTEM
Document Type and Number:
WIPO Patent Application WO/2018/142840
Kind Code:
A1
Abstract:
In this substrate treatment method: substrate temperatures are measured over time in a plurality of heat treatment devices used for heat treatment so as to calculate differences in substrate temperature between the respective heat treatment devices; after formation of a resist pattern on the substrate, measurement is taken of the dimensions of the resist pattern; calculations are performed to determine differences in resist pattern dimensions between the respective heat treatment devices; a reaction speed used for converting a substrate temperature into resist pattern dimensions is calculated using the differences in substrate temperature and the differences in resist pattern dimensions; and a reaction model is derived that is a function of time with respect to said reaction speed. In order to derive the reaction model, the reaction speed at initiation and termination of the heat treatment is set to zero, and an optimization problem for the reaction mode is solved by determining an evaluation function such that the reaction speed becomes continuous in the time direction and that a sum of products between the substrate temperature differences and the reaction model approaches the differences in resist pattern dimensions. By using said reaction model, a treatment condition for the substrate treatment is set.
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Inventors:
NOGAMI TSUYOSHI (JP)
Application Number:
PCT/JP2018/000025
Publication Date:
August 09, 2018
Filing Date:
January 04, 2018
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
G03F7/20; G03F7/26; G03F7/38; H01L21/027
Foreign References:
| JP2003158056A | 2003-05-30 | |||
| JP2005026362A | 2005-01-27 | |||
| JP2014003164A | 2014-01-09 |
Attorney, Agent or Firm:
KANEMOTO, Tetsuo et al. (JP)
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