Title:
SUBSTRATE TREATMENT SYSTEM AND SUBSTRATE TREATMENT METHOD
Document Type and Number:
WIPO Patent Application WO/2021/210431
Kind Code:
A1
Abstract:
A substrate treatment system (1) according to the present disclosure is provided with: an etching treatment unit (16); an inspection unit (50); an estimation unit (181); a calculation unit (183); and a determination unit (184). The etching treatment unit (16) carries out an etching treatment for etching a film (F) formed on the surface of a substrate (W). The inspection unit (50) captures an image of the surface of the substrate (W) after the etching treatment. The estimation unit (181) estimates the film thickness of the film (F) on the basis of the image captured by the inspection unit (50). The calculation unit (183) calculates an etching amount of the film (F) on the basis of the film thickness of the firm (F) before the etching treatment and the film thickness of the firm (F) estimated by the estimation unit (181). The determination unit (184) determines the quality of the etching treatment on the basis of the etching amount calculated by the calculation unit (183).
Inventors:
LEE SUGUEN (JP)
MARUMOTO HIROSHI (JP)
NAKAMORI MITSUNORI (JP)
MARUMOTO HIROSHI (JP)
NAKAMORI MITSUNORI (JP)
Application Number:
PCT/JP2021/014349
Publication Date:
October 21, 2021
Filing Date:
April 02, 2021
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H01L21/306
Foreign References:
| JPH11220004A | 1999-08-10 | |||
| JP2011023629A | 2011-02-03 | |||
| JP2000243678A | 2000-09-08 | |||
| JP2009252945A | 2009-10-29 | |||
| JP2009049382A | 2009-03-05 | |||
| JP2015215193A | 2015-12-03 | |||
| JP2000021851A | 2000-01-21 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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