SUPER-RESOLUTION PHOTOETCHING STRUCTURE, MANUFACTURING METHOD, AND PATTERN TRANSFER METHOD

WIPO Patent Application WO/2024/060362

A1

Provided in the present disclosure are a super-resolution photoetching structure, a manufacturing method, and a pattern transfer method. The manufacturing method comprises: S1, forming a dielectric layer (2) on a substrate (1); S2, depositing a graphene oxide layer onto the dielectric layer (2); S3, roasting the graphene oxide layer and then annealing same to form a reduced graphene oxide thin film layer (3), the reduced graphene oxide thin film layer (3) serving as a first hard mask layer; S4, coating the reduced graphene oxide thin film layer (3) with an Si bottom anti-reflection coating (4), the Si bottom anti-reflection coating (4) serving as a second hard mask layer; and S5, sequentially depositing a metal layer (5) and coating a photosensitive layer (6) on the Si bottom anti-reflection coating (4) so as to obtain the super-resolution photoetching structure. The method of the present disclosure improves the etching selection ratio between the reduced graphene oxide thin film layer and the dielectric layer, thereby avoiding the problems of bowing, wiggling and the like of patterns caused by an excessively high aspect ratio during super-resolution photoetching pattern transfer.

LUO XIANGANG (CN)
GU YU (CN)
LUO YUNFEI (CN)
LIU KAIPENG (CN)
MOU SHUAI (CN)
ZHAO ZEYU (CN)

PCT/CN2022/129522

March 28, 2024

November 03, 2022

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INST OPTICS & ELECTRONICS CAS (CN)

H01L21/033; G03F7/09; H01L21/31

US20160027645A1	2016-01-28
CN104934364A	2015-09-23
CN109742019A	2019-05-10
CN109668631A	2019-04-23
CN115047728A	2022-09-13
US20160282721A1	2016-09-29
CN108790368A	2018-11-13
CN103543600A	2014-01-29

CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)

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