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Title:
SURFACE-EMITTING LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/189523
Kind Code:
A1
Abstract:
This surface-emitting laser element is provided with: a light-transmissive substrate; an n-type semiconductor layer; an active layer; a p-type semiconductor layer; an air-hole layer which is a photonic crystal layer included in the n-type semiconductor layer; a light-reflecting layer which is provided on the p-type semiconductor layer and has a reflecting surface; and a light-transmissive conductor layer which is provided between the reflecting surface and the p-type semiconductor layer. A light exit surface is provided on the back surface of the substrate. The air-hole layer has a diffracting surface which is a wave source when light standing in the air-hole layer is diffracted in a direction orthogonal to the air-hole layer, the air-hole layer including: a destructive region in which a spaced-apart distance is provided between the diffracting surface and the reflecting surface such that the optical intensity of interference light generated due to an interference between first diffracted light diffracted from the diffracting surface toward the light-exit surface and second diffracted light diffracted from the diffracting surface toward the light-reflecting layer and reflected by the reflecting surface is less than the optical intensity of the first diffracted light; and a constructive region in which a spaced-apart distance is provided between the diffracting surface and the reflecting surface such that the optical intensity of the interference light is greater than the optical intensity of the first diffracted light.

Inventors:
NODA SUSUMU (JP)
INOUE TAKUYA (JP)
SATO KAZUKI (JP)
FUJIWARA TAKAKO (JP)
EMOTO KEI (JP)
KOIZUMI TOMOAKI (JP)
Application Number:
PCT/JP2023/009788
Publication Date:
October 05, 2023
Filing Date:
March 14, 2023
Export Citation:
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Assignee:
UNIV KYOTO (JP)
STANLEY ELECTRIC CO LTD (JP)
International Classes:
H01S5/11; H01S5/185
Domestic Patent References:
WO2022014343A12022-01-20
WO2021186965A12021-09-23
WO2019221133A12019-11-21
Foreign References:
US10340659B12019-07-02
Attorney, Agent or Firm:
DELOITTE TOHMATSU IP FIRM (JP)
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