SURFACE LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING SURFACE LIGHT EMITTING ELEMENT

WIPO Patent Application WO/2023/037604

A1

This surface light emitting element comprises: a substrate that has a first surface and a second surface opposed to the first surface; an epitaxial growth layer that has a first semiconductor layer of a first conductivity type, an active layer and a second semiconductor layer of a second conductivity type all of which are sequentially laminated on the second surface by epitaxial growth and that is distributed in the thickness direction and in the resonator length direction; an electrode that is electrically connected to the first semiconductor layer; a current injection region that is formed on the surface of the second semiconductor layer opposite to the substrate and that is electrically connected to the second semiconductor layer and further has an optical transparency; a first reflection layer that is formed on the first surface in accordance with the position of a predetermined thickness of the epitaxial growth layer and that has a curved mirror structure; and a second reflection layer that is formed on the surface of the current injection region opposite to the second semiconductor layer.

JPS614291	SURFACE LIGHT-EMISSION LASER
JP7087684	Vertical resonance type surface emitting laser
JP6958592	Surface emitting semiconductor laser element

SATOU TATSUROU (JP)
KAWANISHI HIDEKAZU (JP)
KODA RINTARO (JP)
HAMAGUCHI TATSUSHI (JP)
NAKAYAMA EIJI (JP)
HOSHINA YUKIO (JP)
HAYASHI KENTARO (JP)
KEARNS JARED (JP)

PCT/JP2022/010414

March 16, 2023

March 09, 2022

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SONY GROUP CORP (JP)

H01S5/183

WO2019171864A1

2019-09-12

JP2018073931A	2018-05-10
JPH0537017A	1993-02-12
US20180287345A1	2018-10-04

TSUBASA PATENT PROFESSIONAL CORPORATION (JP)

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