Title:
SURFACE TREATMENT METHOD FOR SEMICONDUCTOR SUBSTRATE, AND SURFACE TREATMENT AGENT COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2021/235476
Kind Code:
A1
Abstract:
A surface treatment method for a semiconductor substrate according to the present invention is a treatment method for treating a main surface of a semiconductor substrate that has, on the main surface of the substrate, a pattern-formed region in which a pattern having a protrusion-and-recess structure having a pattern dimension of at most 30 nm is formed, and a pattern non-formed region in which no pattern is formed. The surface treatment method includes a surface treatment step for bringing a silylating agent-containing surface treatment agent composition into contact with the pattern-formed region and the pattern non-formed region on the main surface of the semiconductor substrate, wherein, on the surface of the pattern non-formed region after the surface treatment step, the IPA contact angle with respect to 2-propanol is at least 2° at a room temperature of 25 °C, and/or the water contact angle with respect to pure water is at least 50° at a room temperature of 25 °C.
Inventors:
OKUMURA YUZO (JP)
FUKUI YUKI (JP)
SHIOTA SAORI (JP)
TERUI YOSHIHARU (JP)
KUMON SOICHI (JP)
FUKUI YUKI (JP)
SHIOTA SAORI (JP)
TERUI YOSHIHARU (JP)
KUMON SOICHI (JP)
Application Number:
PCT/JP2021/018945
Publication Date:
November 25, 2021
Filing Date:
May 19, 2021
Export Citation:
Assignee:
CENTRAL GLASS CO LTD (JP)
International Classes:
C11D17/08; C11D7/04; C11D7/08; C11D7/18; C11D7/26; C11D7/32; C11D7/50; H01L21/304
Domestic Patent References:
| WO2013132881A1 | 2013-09-12 | |||
| WO2018193841A1 | 2018-10-25 | |||
| WO2018175682A1 | 2018-09-27 |
Foreign References:
| JP2010114414A | 2010-05-20 | |||
| JP2020089194A | 2020-06-04 | |||
| JP2020089201A | 2020-06-04 |
Attorney, Agent or Firm:
HAYAMI Shinji (JP)
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