Title:
SWITCH CAPACITOR CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT THEREOF
Document Type and Number:
WIPO Patent Application WO/2004/112143
Kind Code:
A1
Abstract:
A rectangular parallelepiped protrusion part (21) having a height HB and a width WB is formed on a silicon substrate, and a gate oxide film is formed on portions of the top and side wall surfaces of the protrusion part (21) to form a MOS transistor. P-channel and n-channel MOS transistors prepared as described above are connected in parallel to configure a switch of a switched capacitor circuit. In this way, the switched capacitor circuit can exhibit less leakage currents and less DC offsets.
Inventors:
OHMI TADAHIRO (JP)
NISHIMUTA TAKEFUMI (JP)
MIYAGI HIROSHI (JP)
SUGAWA SHIGETOSHI (JP)
TERAMOTO AKINOBU (JP)
NISHIMUTA TAKEFUMI (JP)
MIYAGI HIROSHI (JP)
SUGAWA SHIGETOSHI (JP)
TERAMOTO AKINOBU (JP)
Application Number:
PCT/JP2004/008220
Publication Date:
December 23, 2004
Filing Date:
June 11, 2004
Export Citation:
Assignee:
TOYOTA JIDOSHOKKI KK (JP)
NIIGATA SEIMITSU CO LTD (JP)
OHMI TADAHIRO (JP)
NISHIMUTA TAKEFUMI (JP)
MIYAGI HIROSHI (JP)
SUGAWA SHIGETOSHI (JP)
TERAMOTO AKINOBU (JP)
NIIGATA SEIMITSU CO LTD (JP)
OHMI TADAHIRO (JP)
NISHIMUTA TAKEFUMI (JP)
MIYAGI HIROSHI (JP)
SUGAWA SHIGETOSHI (JP)
TERAMOTO AKINOBU (JP)
International Classes:
H01L21/336; H01L21/8238; H01L27/092; H03H19/00; (IPC1-7): H01L27/092; H03H19/00; H01L29/78; H01L21/336
Foreign References:
| JP2002118255A | 2002-04-19 | |||
| JP2002261097A | 2002-09-13 | |||
| JPH11163647A | 1999-06-18 |
Attorney, Agent or Firm:
Osuga, Yoshiyuki (Nibancho Bldg. 8-20, Nibancho, Chiyoda-k, Tokyo 84, JP)
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