Title:
TANTALUM CARBIDE, METHOD FOR PRODUCING TANTALUM CARBIDE, TANTALUM CARBIDE WIRING AND TANTALUM CARBIDE ELECTRODE
Document Type and Number:
WIPO Patent Application WO/2005/012174
Kind Code:
A1
Abstract:
Disclosed is a method for forming a tantalum carbide having a certain shape in a simple manner. This method also enables to form a tantalum carbide having a uniform thickness even when the tantalum carbide is formed on the surface of an article, and such a tantalum carbide will not be separated by the thermal history. Also disclosed are a tantalum carbide, tantalum carbide wiring and tantalum carbide electrode obtained by such a method. The method for forming a tantalum carbide is characterized as follows: tantalum or a tantalum alloy is placed in a vacuum heat treating furnace and heat treatment is conducted under the conditions where a natural oxide film, i.e. Ta2O5, formed on the surface of the tantalum or tantalum alloy is sublimed; and after removing the Ta2O5 film, a carbon source is introduced into the vacuum heat treating furnace so that a tantalum carbide is formed on the surface of the tantalum or tantalum alloy.
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Inventors:
KANEKO TADAAKI (JP)
ASAOKA YASUSHI (JP)
SANO NAOKATSU (JP)
ASAOKA YASUSHI (JP)
SANO NAOKATSU (JP)
Application Number:
PCT/JP2004/011325
Publication Date:
February 10, 2005
Filing Date:
July 30, 2004
Export Citation:
Assignee:
NEW IND RES ORGANIZATION (JP)
KANEKO TADAAKI (JP)
ASAOKA YASUSHI (JP)
SANO NAOKATSU (JP)
KANEKO TADAAKI (JP)
ASAOKA YASUSHI (JP)
SANO NAOKATSU (JP)
International Classes:
C01B32/949; C23C8/02; C23C8/20; (IPC1-7): C01B31/30; C23C8/02; C23C8/20
Foreign References:
| JPH0649619A | 1994-02-22 | |||
| US5383981A | 1995-01-24 | |||
| JPS5679449A | 1981-06-30 | |||
| US3586303A | 1971-06-22 |
Other References:
ROCHER M. ET AL.: "Modelling of the growth of carbide layers in tantalum", KEY. ENG. MATER., vol. 206/213, no. PT.1, 2002, pages 527 - 530, XP002904516
KHARATYAN S.L. ET AL.: "Kinetics of tantalum carbidization", SOV. J. CHEM. PHYS., vol. 8, no. 8, 1991, pages 1881 - 1892, XP002904517
TSUTSUMOTO T.: "Improvement of Ta filament for diamond CVD", THIN SOLID FILMS, vol. 317, 1998, pages 371 - 375, XP000667841
See also references of EP 1666413A4
KHARATYAN S. L. ET AL.: "Kinetics of tantalum carbidization", SOV. J. CHEM. PHYS., vol. 8, 1991, pages 1881 - 1892
TSUTSUMOTO T.: "Improvement of Ta filament for diamond CVD", THIN SOLID FILMS, vol. 317, 1998, pages 371 - 375
KHARATYAN S.L. ET AL.: "Kinetics of tantalum carbidization", SOV. J. CHEM. PHYS., vol. 8, no. 8, 1991, pages 1881 - 1892, XP002904517
TSUTSUMOTO T.: "Improvement of Ta filament for diamond CVD", THIN SOLID FILMS, vol. 317, 1998, pages 371 - 375, XP000667841
See also references of EP 1666413A4
KHARATYAN S. L. ET AL.: "Kinetics of tantalum carbidization", SOV. J. CHEM. PHYS., vol. 8, 1991, pages 1881 - 1892
TSUTSUMOTO T.: "Improvement of Ta filament for diamond CVD", THIN SOLID FILMS, vol. 317, 1998, pages 371 - 375
Attorney, Agent or Firm:
Kaji, Yoshiyuki c/o Kaji (Suhara & Associates Recruit Shin Osaka
Bldg., 14-22, Nishinakajima 5-chome, Yodogawa-k, Osaka-shi Osaka, JP)
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