Title:
TARGET FOR MAGNETRON SPUTTERING
Document Type and Number:
WIPO Patent Application WO/2015/064761
Kind Code:
A1
Abstract:
Provided is a novel sputtering target such that the leakage flux is large, there is no concern over composition irregularities during film formation, and film formation at a stable voltage is possible. Provided is a sputtering target comprising: (1) a Co-Pt magnetic phase including Co and Pt, in which the ratio of Pt to Co is 4 to 10 at%; (2) a Co-Cr-Pt nonmagnetic phase including Co, Cr, and Pt, in which the proportion of Co and Cr is 30 at% or more of Cr, and 70 at% or less of Co; and (3) an oxide phase comprising a microdispersed metal oxide.
Inventors:
GOTO YASUYUKI (JP)
KOBAYASHI YUSUKE (JP)
WATANABE YASUNOBU (JP)
KOBAYASHI YUSUKE (JP)
WATANABE YASUNOBU (JP)
Application Number:
PCT/JP2014/079153
Publication Date:
May 07, 2015
Filing Date:
October 28, 2014
Export Citation:
Assignee:
TANAKA PRECIOUS METAL IND (JP)
International Classes:
C23C14/34; G11B5/851
Domestic Patent References:
| WO2013073323A1 | 2013-05-23 |
Foreign References:
| JP2011175725A | 2011-09-08 | |||
| JP2013028841A | 2013-02-07 |
Attorney, Agent or Firm:
ONO, Shinjiro et al. (JP)
Ono Shinjiro (JP)
Ono Shinjiro (JP)
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