Title:
TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/205318
Kind Code:
A1
Abstract:
A TFT array substrate (200) and a manufacturing method therefor, wherein the method for manufacturing a TFT array substrate (200) comprises: using a light-shielding metal (110) to form a bottom gate electrode (101) on a substrate (100); depositing a buffer layer (120) on the substrate (100) on which the bottom gate electrode (101) is formed; performing patterning processing on the buffer layer (120), so that the buffer layer (120) corresponding to an upward side of the bottom gate electrode (101) is thinned; and further forming, within a thinned area on the buffer layer (120), a semiconductor pattern (102) which is arranged opposite the bottom gate electrode (101). Therefore, by means of thinning the thickness an area, corresponding to the bottom gate electrode (101), of the buffer layer (120), the control ability of the bottom gate electrode (101) on the performance of the entire array substrate (200) is improved.
Inventors:
ZENG MIAN (CN)
LIU XIAODI (CN)
LIU XIAODI (CN)
Application Number:
PCT/CN2017/086233
Publication Date:
November 15, 2018
Filing Date:
May 27, 2017
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L29/786
Foreign References:
| CN104465516A | 2015-03-25 | |||
| CN101740631A | 2010-06-16 | |||
| CN103901691A | 2014-07-02 | |||
| US20140203276A1 | 2014-07-24 | |||
| US20150069336A1 | 2015-03-12 |
Attorney, Agent or Firm:
CHINA WISPRO INTELLECTUAL PROPERTY LLP. (CN)
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