Title:
TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/220529
Kind Code:
A1
Abstract:
A TFT array substrate and a manufacturing method therefor. The TFT array substrate comprises a substrate (10), a first metal layer (20) disposed on the substrate (10), a gate insulating layer (30) disposed on the substrate (10) and the first metal layer (20), an active layer (40) disposed on the gate insulating layer (30), and a second metal layer (50) disposed on the gate insulating layer (30); the first metal layer (20) comprises a gate (21); the active layer (40) is located above the gate (21); the second metal layer (50) comprises a source (51) and a drain (52) which are spaced from each other; the source (51) and the drain (52) are respectively in contact with two ends of the active layer (40); the gate insulating layer (30) comprises a first portion (31) covering the gate (21) and a second portion (32) connected to the first portion (31); the thickness of the first portion (31) is smaller than the thickness of the second portion (32). The on-state current of a TFT device can be effectively increased and the threshold voltage can be reduced to improve the switching characteristics, and thus the product quality is improved.
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Inventors:
TIAN XINBIN (CN)
XU XIANGYANG (CN)
XU XIANGYANG (CN)
Application Number:
PCT/CN2019/102181
Publication Date:
November 05, 2020
Filing Date:
August 23, 2019
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L27/12; G02F1/1368; H01L21/77
Foreign References:
CN110085604A | 2019-08-02 | |||
CN107195634A | 2017-09-22 | |||
CN107170752A | 2017-09-15 | |||
CN108649016A | 2018-10-12 | |||
JPH08236775A | 1996-09-13 | |||
US20070018151A1 | 2007-01-25 | |||
CN103117285A | 2013-05-22 | |||
CN101740631A | 2010-06-16 |
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
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