Title:
TFT BACKPLANE STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2017/092173
Kind Code:
A1
Abstract:
A TFT backplane structure and a manufacturing method therefor. The TFT backplane structure is provided as a three-layered structure at an area where a gate insulating layer (4) corresponds to where a TFT (T) is located, namely a dielectric layer (41), a silicon nitride layer (42), and a silicon dioxide layer (43) in an ascending sequence, and is capable of strengthening the reliability of the TFT (T), is provided as a two-layered structure at an area where the gate insulating layer (4) corresponds to where a storage capacitor (C) is located, namely a dielectric layer (41) and an at least partly a silicon nitride layer (42) in an ascending sequence, or is a single-layered structure at the area where the gate insulating layer (4) corresponds to where the storage capacitor (C) is located, comprising only the dielectric layer (41), increases a dielectric constant, and reduces the distance between two electrode plates of the storage capacitor (C), thus increasing capacitor surface area and increasing aperture ratio under the premise that the performance of the storage capacitor (C) is ensured.
Inventors:
ZHOU XINGYU (CN)
Application Number:
PCT/CN2016/072873
Publication Date:
June 08, 2017
Filing Date:
January 29, 2016
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L27/12; H01L21/77
Foreign References:
| CN103296034A | 2013-09-11 | |||
| CN104538403A | 2015-04-22 | |||
| US20080128719A1 | 2008-06-05 |
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
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