Title:
TFT PANEL STRUCTURE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2017/016007
Kind Code:
A1
Abstract:
A thin film transistor (TFT) panel structure and manufacturing method thereof. The manufacturing method comprises: forming a graphene layer (5) above a semiconductor layer (4); fabricating a second metal layer (6), and then injecting fluoride ions into the graphene layer (5) by using the second metal layer (6) as a mask; and forming a modification area on the graphene layer and corresponding to a channel area (41). The graphene layer in the modification area has an isolation property and a water or oxygen insulation property and provides protection for the channel area. The graphene layer below a source and a drain (61, 62) is not doped by ions and maintains excellent electrical conductivity of graphene. As a result, the source and drain can be electrically connected to the semiconductor layer without requiring to dispose a through hole in the graphene layer, enabling favorable I-V output performance and stability of a manufactured TFT device, reducing a mask process, shortening a production period, and decreasing manufacturing costs.
Inventors:
WU YUE (CN)
Application Number:
PCT/CN2015/087726
Publication Date:
February 02, 2017
Filing Date:
August 21, 2015
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L27/12; H01L29/786; H01L29/06
Foreign References:
| CN104409515A | 2015-03-11 | |||
| CN103247689A | 2013-08-14 | |||
| CN104040416A | 2014-09-10 | |||
| CN104377246A | 2015-02-25 |
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
Download PDF: