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Title:
THERMALLY PROCESSING A SUBSTRATE
Document Type and Number:
WIPO Patent Application WO2002005323
Kind Code:
A3
Abstract:
A thermal processing method is described in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or during both phases. This reduces the thermal budget of the substrate. In particular, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e.g., a water-cooled reflector plate assembly), the temperature response of the substrate may be controlled during the thermal process. The rate of heat transfer may changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing the distance between the substrate and the thermal reservoir. The thermal conductivity may be changed by changing the characteristics of a thermal transport medium (e.g., a purge gas) located between the substrate and the thermal reservoir.

Inventors:
BOAS RYAN C
BALAKRISHNA AJIT
BIERMAN BENJAMIN
HAAS BRIAN L
JENNINGS DEAN
ADERHOLD WOLFGANG
RAMAMURTHY SUNDAR
MAYUR ABHILASH
Application Number:
PCT/US2001/021154
Publication Date:
June 20, 2002
Filing Date:
July 03, 2001
Export Citation:
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Assignee:
APPLIED MATERIALS INC (US)
International Classes:
H01L21/26; C30B25/10; C30B31/12; H01L21/00; (IPC1-7): H01L21/00
Domestic Patent References:
WO1998001890A11998-01-15
Foreign References:
EP0698673A11996-02-28
US6046439A2000-04-04
EP0644578A21995-03-22
US6054688A2000-04-25
US5181556A1993-01-26
US4818327A1989-04-04
EP1067587A22001-01-10
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