Title:
THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION MATERIAL COMPOSITION, THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION MODULE, THERMOELECTRIC CONVERSION SYSTEM, METHOD FOR PRODUCING THERMOELECTRIC CONVERSION MATERIAL COMPOSITION, AND METHOD FOR PRODUCING THERMOELECTRIC CONVERSION MATERIAL
Document Type and Number:
WIPO Patent Application WO/2023/145339
Kind Code:
A1
Abstract:
A thermoelectric conversion material according to the present disclosure contains Ge, Ti, Te, and at least one selected from the group consisting of Sb and Bi, and satisfies condition (1) represented by α+β+γ<1.00. In condition (1), α is the molar ratio of the Ge content to the Te content, β is the molar ratio of the Ti content to the Te content, and γ is the molar ratio of the sum of the Sb and Bi content to the Te content.
More Like This:
Inventors:
ANDO FUYUKI
TAMAKI HIROMASA
YAMAMURA RYOSUKE
TAMAKI HIROMASA
YAMAMURA RYOSUKE
Application Number:
PCT/JP2022/047478
Publication Date:
August 03, 2023
Filing Date:
December 22, 2022
Export Citation:
Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H10N10/852; B22F3/105; B22F3/14; C22C28/00; C22F1/00; C22F1/18; H10N10/01
Foreign References:
| JP2021168336A | 2021-10-21 |
Other References:
DI WU; LIN XIE; XIAO XU; JIAQING HE: "High Thermoelectric Performance Achieved in GeTe–Bi2Te3 Pseudo‐Binary via Van der Waals Gap‐Induced Hierarchical Ferroelectric Domain Structure", ADVANCED FUNCTIONAL MATERIALS, WILEY - V C H VERLAG GMBH & CO. KGAA, DE, vol. 29, no. 18, 7 March 2019 (2019-03-07), DE , pages n/a - n/a, XP072412755, ISSN: 1616-301X, DOI: 10.1002/adfm.201806613
SHUAI J., TAN X.J., GUO Q., XU J.T., GELLÉ A., GAUTIER R., HALET J.-F., FAILAMANI F., JIANG J., MORI T.: "Enhanced thermoelectric performance through crystal field engineering in transition metal–doped GeTe", MATERIALS TODAY PHYSICS, vol. 9, 1 June 2019 (2019-06-01), pages 100094, XP093080206, ISSN: 2542-5293, DOI: 10.1016/j.mtphys.2019.100094
MIN HONG; ZHI‐GANG CHEN; LEI YANG; YI‐CHAO ZOU; MATTHEW S. DARGUSCH; HAO WANG; JIN ZOU: "Realizing zT of 2.3 in Ge1−x−ySbxInyTe via Reducing the Phase‐Transition Temperature and Introducing Resonant Energy Doping", ADVANCED MATERIALS, VCH PUBLISHERS, DE, vol. 30, no. 11, 19 January 2018 (2018-01-19), DE , pages n/a - n/a, XP071871267, ISSN: 0935-9648, DOI: 10.1002/adma.201705942
SHUAI J., TAN X.J., GUO Q., XU J.T., GELLÉ A., GAUTIER R., HALET J.-F., FAILAMANI F., JIANG J., MORI T.: "Enhanced thermoelectric performance through crystal field engineering in transition metal–doped GeTe", MATERIALS TODAY PHYSICS, vol. 9, 1 June 2019 (2019-06-01), pages 100094, XP093080206, ISSN: 2542-5293, DOI: 10.1016/j.mtphys.2019.100094
MIN HONG; ZHI‐GANG CHEN; LEI YANG; YI‐CHAO ZOU; MATTHEW S. DARGUSCH; HAO WANG; JIN ZOU: "Realizing zT of 2.3 in Ge1−x−ySbxInyTe via Reducing the Phase‐Transition Temperature and Introducing Resonant Energy Doping", ADVANCED MATERIALS, VCH PUBLISHERS, DE, vol. 30, no. 11, 19 January 2018 (2018-01-19), DE , pages n/a - n/a, XP071871267, ISSN: 0935-9648, DOI: 10.1002/adma.201705942
Attorney, Agent or Firm:
KAMADA Koichi et al. (JP)
Download PDF: