Title:
THERMOELECTRIC CONVERSION MODULE AND THERMOELECTRIC CONVERSION SYSTEM
Document Type and Number:
WIPO Patent Application WO/2023/145340
Kind Code:
A1
Abstract:
A thermoelectric conversion module 1a comprises N-type thermoelectric conversion elements 20, P-type thermoelectric conversion elements 10, and electrodes 30. Each N-type thermoelectric conversion element 20 includes an N-type thermoelectric conversion material. Each P-type thermoelectric conversion element 10 includes a P-type thermoelectric conversion material. The N-type thermoelectric conversion material contains Mg, and Sb or Bi. The P-type thermoelectric conversion material contains Ge, Te, at least one selected from the group consisting of In and Ti, and at least one selected from the group consisting of Sb and Bi. The P-type thermoelectric conversion material satisfies condition (1) represented by α+β+γ<1.00. α is the molar ratio of the Ge content to the Te content. β is the molar ratio of the sum of the In and Ti content to the Te content. γ is the molar ratio of the sum of the Sb and Bi content to the Te content.
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Inventors:
ANDO FUYUKI
TAMAKI HIROMASA
YAMAMURA RYOSUKE
TAMAKI HIROMASA
YAMAMURA RYOSUKE
Application Number:
PCT/JP2022/047479
Publication Date:
August 03, 2023
Filing Date:
December 22, 2022
Export Citation:
Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H10N10/852; C22C23/00; C22C28/00; H10N10/01; H10N10/853
Foreign References:
| JP2019207983A | 2019-12-05 | |||
| JP2020167265A | 2020-10-08 | |||
| JP2014195080A | 2014-10-09 | |||
| JP2014086623A | 2014-05-12 | |||
| JP2021168336A | 2021-10-21 | |||
| CN113121234A | 2021-07-16 |
Other References:
KOSUGA ATSUKO, ISHIBASHI HIROKI, KUBOTA YOSHIKI, KIFUNE KOUICHI: "Crystal Structure and Thermoelectric Properties of Ge-Sb-Te Homologous Structure", JOURNAL OF THE JAPAN INSTITUTE OF METALS AND MATERIALS, NIPPON KINZOKU GAKKAI, TOKYO., JP, vol. 79, no. 11, 1 January 2015 (2015-01-01), JP , pages 562 - 568, XP093082178, ISSN: 0021-4876, DOI: 10.2320/jinstmet.JA201506
DI WU; LIN XIE; XIAO XU; JIAQING HE: "High Thermoelectric Performance Achieved in GeTe–Bi2Te3 Pseudo‐Binary via Van der Waals Gap‐Induced Hierarchical Ferroelectric Domain Structure", ADVANCED FUNCTIONAL MATERIALS, WILEY - V C H VERLAG GMBH & CO. KGAA, DE, vol. 29, no. 18, 7 March 2019 (2019-03-07), DE , XP072412755, ISSN: 1616-301X, DOI: 10.1002/adfm.201806613
SHUAI J., TAN X.J., GUO Q., XU J.T., GELLÉ A., GAUTIER R., HALET J.-F., FAILAMANI F., JIANG J., MORI T.: "Enhanced thermoelectric performance through crystal field engineering in transition metal–doped GeTe", MATERIALS TODAY PHYSICS, vol. 9, 1 June 2019 (2019-06-01), pages 100094, XP093080206, ISSN: 2542-5293, DOI: 10.1016/j.mtphys.2019.100094
DI WU; LIN XIE; XIAO XU; JIAQING HE: "High Thermoelectric Performance Achieved in GeTe–Bi2Te3 Pseudo‐Binary via Van der Waals Gap‐Induced Hierarchical Ferroelectric Domain Structure", ADVANCED FUNCTIONAL MATERIALS, WILEY - V C H VERLAG GMBH & CO. KGAA, DE, vol. 29, no. 18, 7 March 2019 (2019-03-07), DE , XP072412755, ISSN: 1616-301X, DOI: 10.1002/adfm.201806613
SHUAI J., TAN X.J., GUO Q., XU J.T., GELLÉ A., GAUTIER R., HALET J.-F., FAILAMANI F., JIANG J., MORI T.: "Enhanced thermoelectric performance through crystal field engineering in transition metal–doped GeTe", MATERIALS TODAY PHYSICS, vol. 9, 1 June 2019 (2019-06-01), pages 100094, XP093080206, ISSN: 2542-5293, DOI: 10.1016/j.mtphys.2019.100094
Attorney, Agent or Firm:
KAMADA Koichi et al. (JP)
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