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Title:
THIN-FILM BULK ACOUSTIC WAVE RESONATOR AND METHOD FOR MANUFACTURE THEREOF
Document Type and Number:
WIPO Patent Application WO/2021/179729
Kind Code:
A1
Abstract:
Provided are a thin-film bulk acoustic wave resonator and a method for manufacture thereof, the thin-film bulk acoustic wave resonator comprising: a carrier substrate (100); a support layer (102), bonded to the carrier substrate (100); the support layer (102) encloses a first cavity (110a), and the first cavity (110a) exposes the carrier substrate (100); a piezoelectric stack structure, covering the first cavity (110a), said piezoelectric stack structure comprising a first electrode (103), a piezoelectric layer (104), and a second electrode (105) which are stacked in sequence from bottom to top; a protrusion (40) is arranged at the boundary of the effective resonance zone, said protrusion (40) being arranged on the upper surface or the lower surface of the piezoelectric stack structure; or, the protrusion (40) is partially arranged on the upper surface of the piezoelectric stack structure, and partially arranged on the lower surface of the piezoelectric stack structure. The beneficial effect is that the invention solves the problems of low structural strength of a thin-film bulk acoustic wave resonator and low quality factor caused by lateral wave leakage.

Inventors:
HUANG HERB HE (CN)
LUO HAILONG (CN)
LI WEI (CN)
Application Number:
PCT/CN2020/137048
Publication Date:
September 16, 2021
Filing Date:
December 17, 2020
Export Citation:
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Assignee:
NINGBO SEMICONDUCTOR INT CORP (CN)
International Classes:
H03H3/02; H03H3/04; H03H9/02; H03H9/17
Foreign References:
CN108075743A2018-05-25
CN107947751A2018-04-20
CN109660227A2019-04-19
CN110829997A2020-02-21
CN112039465A2020-12-04
CN105590869A2016-05-18
US20180278227A12018-09-27
Attorney, Agent or Firm:
BEIJING SICHUANG DACHENG INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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