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Patent Searching and Data


Title:
THIN-FILM BULK ACOUSTIC WAVE RESONATOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/254342
Kind Code:
A1
Abstract:
The present invention relates to a thin-film bulk acoustic wave resonator and a manufacturing method therefor. The thin-film bulk acoustic wave resonator comprises: a first substrate provided with a first cavity; a piezoelectric stacked structure, which comprises, from bottom to top, a first electrode, a piezoelectric layer and a second electrode, which are successively stacked, wherein the piezoelectric layer covers the first cavity, edges of both the first electrode and the second electrode are located within the boundary of an area defined by the first cavity, and an effective resonance area comprises an area in which the first electrode, the piezoelectric layer and the second electrode overlap with each other in a direction perpendicular to the surface of the piezoelectric layer; a first electrode lead-out structure, which is connected to the edge of the first electrode, extends to an ineffective resonance area to serve as a first signal connection end, and performs enclosing to form a first gap with the piezoelectric stacked structure at an edge of the effective resonance area; and a second electrode lead-out structure, which is connected to the edge of the second electrode, extends to the ineffective resonance area to serve as a second signal connection end, and performs enclosing to form a second gap with the piezoelectric stacked structure at the edge of the effective resonance area. By means of the present invention, a Q value is improved by means of eliminating clutter on the boundary of an effective resonance area.

Inventors:
HUANG HERB HE (CN)
Application Number:
PCT/CN2021/100169
Publication Date:
December 23, 2021
Filing Date:
June 15, 2021
Export Citation:
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Assignee:
NINGBO SEMICONDUCTOR INT CORPORATION SHANGHAI BRANCH (CN)
International Classes:
H03H9/17; H03H3/02
Foreign References:
CN112039470A2020-12-04
CN112039486A2020-12-04
CN112039468A2020-12-04
CN108123695A2018-06-05
CN110829997A2020-02-21
CN101931380A2010-12-29
US8692631B22014-04-08
Attorney, Agent or Firm:
BEIJING SICHUANG DACHENG INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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