Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
THIN-FILM BULK ACOUSTIC WAVE RESONATOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/012437
Kind Code:
A1
Abstract:
The present invention relates to a thin-film bulk acoustic wave resonator and a manufacturing method therefor. The thin-film bulk acoustic wave resonator comprises: a lead-out electrode, a piezoelectric layer, and an external electrode that are stacked, an effective resonance region comprising a region in which the lead-out electrode, the piezoelectric layer, and the external electrode overlap with one another in the direction perpendicular to the surface of the piezoelectric layer, and the region outside of the effective resonance region being an ineffective region; a first dielectric layer, a first gap being disposed between the surface of the first dielectric layer and the surface of the lead-out electrode, and the portion of the lead-out electrode that extends out of the first gap from the effective resonance region being a first lead-out portion; a second dielectric layer, a second gap being disposed between the surface of the second dielectric layer and the surface of the external electrode, and the external electrode being located in a region enclosed and formed by the second gap or the boundaries of the external electrode and the second gap being coincident; and a conductive pillar, one end of the conductive pillar being connected to the external electrode, the other end thereof being connected to a second lead-out portion, and the second lead-out portion extending out of the second gap from the effective resonance region. One among the lead-out electrode and the external electrode is located above the other.

Inventors:
HUANG HERB HE (CN)
Application Number:
PCT/CN2021/105530
Publication Date:
January 20, 2022
Filing Date:
July 09, 2021
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
NINGBO SEMICONDUCTOR INT CORP (CN)
International Classes:
H03H3/02; H03H9/17; H03H9/02
Foreign References:
CN106877836A2017-06-20
CN110401428A2019-11-01
CN110784188A2020-02-11
US20050142888A12005-06-30
US20070139139A12007-06-21
Attorney, Agent or Firm:
BEIJING SICHUANG DACHENG INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
Download PDF: