Title:
THIN-FILM BULK ACOUSTIC WAVE RESONATOR, FABRICATION METHOD THEREFOR, AND FILTER
Document Type and Number:
WIPO Patent Application WO/2022/134196
Kind Code:
A1
Abstract:
Disclosed by the present application are a thin-film bulk acoustic wave resonator, a fabrication method therefor, and a filter. The thin-film bulk acoustic wave resonator comprises: a substrate and a piezoelectric thin-film stacking structure. The substrate has a cavity. The piezoelectric thin-film stacking structure is connected to the substrate, and at least a part of the piezoelectric thin-film stacking structure is suspended above the cavity. The thin-film bulk acoustic wave resonator according to the embodiments of the present application has improved stability and reliability.
Inventors:
ZHENG GENLIN (CN)
ZHANG SHUMIN (CN)
NIU YUJIAO (CN)
ZHANG SHUMIN (CN)
NIU YUJIAO (CN)
Application Number:
PCT/CN2020/142519
Publication Date:
June 30, 2022
Filing Date:
December 31, 2020
Export Citation:
Assignee:
HANGZHOU SAPPLAND MICROELECTRONICS TECH CO LTD (CN)
International Classes:
H03H9/17; H03H3/02; H03H9/02
Foreign References:
CN107231138A | 2017-10-03 | |||
CN110829997A | 2020-02-21 | |||
CN210273998U | 2020-04-07 | |||
CN112039486A | 2020-12-04 | |||
CA2163033C | 2000-01-25 |
Attorney, Agent or Firm:
TSINGYIHUA INTELLECTUAL PROPERTY LLC (CN)
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