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Title:
THIN-FILM ESD PROTECTION DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/168173
Kind Code:
A1
Abstract:
A thin-film ESD protection device (101) provided with a semiconductor substrate (21) having a first main surface (PS1) and a second main surface (PS2), a first insulating layer (TL1) formed on the first main surface (PS1), a second insulating layer (TL2) formed on the second main surface (PS2), a first input/output electrode (P1), a second input/output electrode (P2), ground electrodes (GP1, GP2), a diode element (D1), a capacitor element (C1), and an inductor element (L1). The capacitor element (C1) and the diode element (D1) are formed on the first-main-surface (PS1) side, and the inductor element (L1) is formed on the second-main-surface side. The inductor element (L1) is connected to the first input/output electrode (P1) and the second input/output electrode (P2) via a first via conductor (TSV1) and a second via conductor (TSV2) penetrating to the first main surface (PS1) and the second main surface (PS2), respectively.

Inventors:
FUKAHORI SOUKO (JP)
Application Number:
PCT/JP2018/000631
Publication Date:
September 20, 2018
Filing Date:
January 12, 2018
Export Citation:
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Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H01L21/3205; H01L21/822; H01L21/768; H01L23/522; H01L27/04
Domestic Patent References:
WO2016013555A12016-01-28
WO2003007451A12003-01-23
WO2015025753A12015-02-26
Foreign References:
JP2001185685A2001-07-06
JP2011192780A2011-09-29
JP2004523924A2004-08-05
JP2008532308A2008-08-14
JP2008103397A2008-05-01
JP2012517109A2012-07-26
Attorney, Agent or Firm:
KAEDE PATENT ATTORNEYS' OFFICE (JP)
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