THIN FILM PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2010/087312

A1

Disclosed is a photoelectric conversion device which comprises, on a light-transmitting insulating substrate (1), in the following order: a first electrode (2); a first photoelectric conversion layer (3) for performing photoelectric conversion, wherein a first p-type semiconductor layer (3a), a first i-type semiconductor layer (3b) and a first n-type semiconductor layer (3c) are sequentially laminated from the first electrode layer (2) side; an intermediate layer (4); a second photoelectric conversion layer (5) for performing photoelectric conversion, wherein a second p-type semiconductor layer (5a), a second i-type semiconductor layer (5b) and a second n-type semiconductor layer (5c) are sequentially laminated from the first electrode layer (2) side; and a second electrode layer (6). The intermediate layer (4) contains a layer (4a) that is mainly composed of silicon oxide and a layer (4b) that is composed of a conductive material, and electrically connects the first photoelectric conversion layer (3) with the second photoelectric conversion layer (5).

KONISHI HIROFUMI (JP)
TOKIOKA HIDETADA (JP)
YAMAMUKA MIKIO (JP)
YAMARIN HIROYA (JP)

PCT/JP2010/050917

August 05, 2010

January 25, 2010

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MITSUBISHI ELECTRIC CORP (JP)
KONISHI HIROFUMI (JP)
TOKIOKA HIDETADA (JP)
YAMAMUKA MIKIO (JP)
YAMARIN HIROYA (JP)

H01L31/04

WO2005081324A1

2005-09-01

JP2003124481A	2003-04-25
JP2007266096A	2007-10-11
JPH02237172A	1990-09-19
JP2004071716A	2004-03-04
JP2005093631A	2005-04-07
JPH04127580A	1992-04-28

SAKAI, HIROAKI (JP)
Hiroaki Sakai (JP)

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