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Title:
THIN FILM SEMICONDUCTOR DEVICE FOR DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THE THIN FILM SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/141954
Kind Code:
A1
Abstract:
Disclosed is a thin film semiconductor device for a display device, wherein an off-current is significantly reduced, while significantly increasing an on-current. The thin film semiconductor device is provided with: a first channel layer (130), which is composed of a polycrystalline semiconductor layer; a second channel layer (140), which is composed of an amorphous semiconductor layer formed on the first channel layer (130), and which has a protruding portion on the surface; an insulating layer (150), which is formed on the upper surface of the protruding portion of the second channel layer (140); contact layers (160, 161), which are respectively formed on the upper surfaces and the side surfaces of the end portions of the insulating layer (150), the side surfaces of the protruding portion of the second channel layer (140), said side surfaces being continuous to the side surfaces of the insulating layer (150), and the upper surfaces of the second channel layer (140), said upper surfaces being continuous to the side surfaces of the protruding portion of the second channel layer (140); and a source electrode (170) and a drain electrode (171). The contact layers (160, 161) are first conductivity type, and the upper portion of the protruding portion of the second channel layer (140) is second conductivity type.

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Inventors:
HAYASHI HIROSHI
KAWASHIMA TAKAHIRO
KAWACHI GENSHIRO
Application Number:
PCT/JP2010/003186
Publication Date:
November 17, 2011
Filing Date:
May 11, 2010
Export Citation:
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Assignee:
PANASONIC CORP (JP)
PANASONIC LIQUID CRYSTAL DISPL (JP)
HAYASHI HIROSHI
KAWASHIMA TAKAHIRO
KAWACHI GENSHIRO
International Classes:
H01L29/786; H05B44/00
Foreign References:
JPH06326314A1994-11-25
JPH0563196A1993-03-12
Attorney, Agent or Firm:
NII, Hiromori (JP)
New house extensive 守 (JP)
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Claims:



 
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