Title:
THIN-FILM SURFACE ACOUSTIC WAVE RESONATOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/100468
Kind Code:
A1
Abstract:
The present invention relates to a thin-film surface acoustic wave resonator and a manufacturing method therefor. The thin-film surface acoustic wave resonator comprises: a first interdigitated electrode having multiple first interdigitated fingers and a second interdigitated electrode having multiple second interdigitated fingers, wherein the first interdigitated fingers are spaced apart from the second interdigitated fingers; a first connection line at least located at an end of the first interdigitated fingers and electrically connected to the first interdigitated fingers; and a second connection line at least located at an end of the second interdigitated fingers and electrically connected to the second interdigitated fingers. A first gap is present between the first connection line and the first interdigitated fingers, and the first connection line and the first interdigitated fingers are connected by means of a first interconnection electrode spanning the first gap; and/or, a second gap is present between the second connection line and the second interdigitated fingers, and the second connection line and the second interdigitated fingers are connected by means of a second interconnection electrode spanning the second gap. In the present invention, interdigitated fingers are spaced apart from a corresponding connection line by means of a corresponding gap, thereby preventing the interdigitated fingers from being obstructed by resonances of metal structures other than the interdigitated fingers, while avoiding disturbances to surface acoustic waves at end portions of the interdigitated fingers.
Inventors:
HUANG HERB HE (CN)
LUO HAILONG (CN)
LI WEI (CN)
LUO HAILONG (CN)
LI WEI (CN)
Application Number:
PCT/CN2021/127857
Publication Date:
May 19, 2022
Filing Date:
November 01, 2021
Export Citation:
Assignee:
NINGBO SEMICONDUCTOR INT CORPORATION SHANGHAI BRANCH (CN)
International Classes:
H03H3/02; H03H9/02
Foreign References:
| US20160373084A1 | 2016-12-22 | |||
| CN110114973A | 2019-08-09 | |||
| CN208028861U | 2018-10-30 | |||
| CN109004914A | 2018-12-14 |
Attorney, Agent or Firm:
BEIJING SICHUANG DACHENG INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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